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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
14 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
APT84F50L
获得报价
RFQ
600
有现货
Microsemi Corporation MOSFET N-CH 500V 84A TO-264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
APT84F50B2
获得报价
RFQ
3,386
有现货
Microsemi Corporation MOSFET N-CH 500V 84A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
APT84M50B2
获得报价
RFQ
2,084
有现货
Microsemi Corporation MOSFET N-CH 500V 84A T-MAX - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
IRF1010EL
获得报价
RFQ
2,609
有现货
Infineon Technologies MOSFET N-CH 60V 84A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
APT84M50L
单位
$20.13
获得报价
RFQ
3,785
有现货
Microsemi Corporation MOSFET N-CH 500V 84A TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
IPA029N06NXKSA1
单位
$1.52
获得报价
RFQ
1,599
有现货
Infineon Technologies MOSFET N-CH 60V TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 38W (Tc) N-Channel - 60V 84A (Tc) 2.9 mOhm @ 84A, 10V 3.3V @ 75µA 66nC @ 10V 5125pF @ 30V 6V, 10V ±20V
STWA88N65M5
单位
$19.41
获得报价
RFQ
2,123
有现货
STMicroelectronics MOSFET N-CH 650V 84A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 650V 84A (Tc) 29 mOhm @ 42A, 10V 5V @ 250µA 204nC @ 10V 8825pF @ 100V 10V ±25V
IRLU3802PBF
获得报价
RFQ
3,105
有现货
Infineon Technologies MOSFET N-CH 12V 84A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 88W (Tc) N-Channel - 12V 84A (Tc) 8.5 mOhm @ 15A, 4.5V 1.9V @ 250µA 41nC @ 5V 2490pF @ 6V 2.8V, 4.5V ±12V
IRF1010EPBF
单位
$1.53
获得报价
RFQ
3,549
有现货
Infineon Technologies MOSFET N-CH 60V 84A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 60V 84A (Tc) 12 mOhm @ 50A, 10V 4V @ 250µA 130nC @ 10V 3210pF @ 25V 10V ±20V
STP90N6F6
单位
$1.66
获得报价
RFQ
2,820
有现货
STMicroelectronics MOSFET N-CH 60V 84A TO-220AB DeepGATE™, STripFET™ VI Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220 136W (Tc) N-Channel - 60V 84A (Tc) 6.8 mOhm @ 38.5A, 10V 4V @ 250µA 74.9nC @ 10V 4295pF @ 25V 10V ±20V
IPA032N06N3GXKSA1
单位
$2.90
获得报价
RFQ
1,501
有现货
Infineon Technologies MOSFET N-CH 60V 84A TO220-3-31 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 41W (Tc) N-Channel - 60V 84A (Tc) 3.2 mOhm @ 80A, 10V 4V @ 118µA 165nC @ 10V 13000pF @ 30V 10V ±20V
STW88N65M5-4
单位
$11.73
获得报价
RFQ
2,626
有现货
STMicroelectronics MOSFET N-CH 650V 84A MDmesh™ M5 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-4 TO-247-4L 450W (Tc) N-Channel - 650V 84A (Tc) 29 mOhm @ 42A, 10V 5V @ 250µA 204nC @ 10V 8825pF @ 100V 10V ±25V
IPP120N20NFDAKSA1
单位
$6.65
获得报价
RFQ
1,251
有现货
Infineon Technologies MOSFET N-CH 200V 84A TO220 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 200V 84A (Tc) 12 mOhm @ 84A, 10V 4V @ 270µA 87nC @ 10V 6650pF @ 100V 10V ±20V
STW88N65M5
单位
$21.63
获得报价
RFQ
3,457
有现货
STMicroelectronics MOSFET N-CH 650V 84A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 450W (Tc) N-Channel - 650V 84A (Tc) 29 mOhm @ 42A, 10V 5V @ 250µA 204nC @ 10V 8825pF @ 100V 10V ±25V
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