- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
16 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,899
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,489
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
689
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.3 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,685
有现货
|
NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,904
有现货
|
NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,336
有现货
|
NXP USA Inc. | MOSFET N-CH 100V 64A D2PAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 100V | 64A (Tc) | 19 mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
886
有现货
|
Infineon Technologies | MOSFET N-CH 75V 40A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 48W (Tc) | N-Channel | - | 75V | 40A (Tc) | 13 mOhm @ 43A, 10V | 4V @ 250µA | 150nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,298
有现货
|
Infineon Technologies | MOSFET P-CH 55V 74A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
989
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,373
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.3 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,834
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 250W (Tc) | N-Channel | - | 55V | 80A (Tc) | 6.6 mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,054
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 36A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 68W (Tc) | P-Channel | - | 60V | 36A (Tc) | 25 mOhm @ 10A, 10V | 2.5V @ 250µA | 100nC @ 10V | 3400pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,167
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 36A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 68W (Tc) | P-Channel | - | 60V | 36A (Tc) | 25 mOhm @ 10A, 10V | 2.5V @ 250µA | 100nC @ 10V | 3400pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,236
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 36A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 68W (Tc) | P-Channel | - | 60V | 36A (Tc) | 25 mOhm @ 10A, 10V | 2.5V @ 250µA | 100nC @ 10V | 3400pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,658
有现货
|
Infineon Technologies | MOSFET P-CH 55V 74A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,925
有现货
|
Infineon Technologies | MOSFET P-CH 55V 74A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V |