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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
16 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRF3805LPBF
获得报价
RFQ
3,002
有现货
Infineon Technologies MOSFET N-CH 55V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IPB240N04S4R9ATMA1
单位
$1.76
获得报价
RFQ
3,057
有现货
Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 300W (Tc) N-Channel - 40V 240A (Tc) 0.87 mOhm @ 100A, 10V 4V @ 230µA 290nC @ 10V 23000pF @ 25V 10V ±20V
IRF3805S
获得报价
RFQ
3,816
有现货
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IRF3805
获得报价
RFQ
2,301
有现货
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
SQM120N02-1M3L_GE3
单位
$1.47
获得报价
RFQ
2,524
有现货
Vishay Siliconix MOSFET N-CH 20V 120A TO263 Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 375W (Tc) N-Channel - 20V 120A (Tc) 1.3 mOhm @ 40A, 10V 2.5V @ 250µA 290nC @ 10V 14500pF @ 10V 4.5V, 10V ±20V
AUIRF3805L
单位
$2.01
获得报价
RFQ
1,316
有现货
Infineon Technologies MOSFET N-CH 55V 160A TO262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 55V 160A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
AUIRF3805S
获得报价
RFQ
2,788
有现货
Infineon Technologies MOSFET N-CH 55V 160A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 160A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IRF3805STRLPBF
获得报价
RFQ
2,571
有现货
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IRF3805STRLPBF
单位
$3.90
获得报价
RFQ
2,599
有现货
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IRF3805STRLPBF
单位
$2.03
获得报价
RFQ
3,274
有现货
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
FQA160N08
单位
$6.87
获得报价
RFQ
2,389
有现货
ON Semiconductor MOSFET N-CH 80V 160A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 375W (Tc) N-Channel - 80V 160A (Tc) 7 mOhm @ 80A, 10V 4V @ 250µA 290nC @ 10V 7900pF @ 25V 10V ±25V
AUIRF3805
单位
$2.46
获得报价
RFQ
1,496
有现货
Infineon Technologies MOSFET N-CH 55V 160A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 300W (Tc) N-Channel - 55V 160A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
FQA170N06
单位
$7.72
获得报价
RFQ
638
有现货
ON Semiconductor MOSFET N-CH 60V 170A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 375W (Tc) N-Channel - 60V 170A (Tc) 5.6 mOhm @ 85A, 10V 4V @ 250µA 290nC @ 10V 9350pF @ 25V 10V ±25V
IRF3805SPBF
单位
$3.98
获得报价
RFQ
1,880
有现货
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
IRFI4110GPBF
单位
$3.80
获得报价
RFQ
773
有现货
Infineon Technologies MOSFET N-CH 100V 72A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 61W (Tc) N-Channel - 100V 72A (Tc) 4.5 mOhm @ 43A, 10V 4V @ 250µA 290nC @ 10V 9540pF @ 50V 10V ±20V
IRF3805PBF
单位
$3.60
获得报价
RFQ
1,979
有现货
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 55V 75A (Tc) 3.3 mOhm @ 75A, 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V 10V ±20V
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