- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,562
有现货
|
IXYS | MOSFET N-CH 200V 210A PLUS264 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | PLUS264™ | 1500W (Tc) | N-Channel | - | 200V | 210A (Tc) | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,500
有现货
|
ON Semiconductor | PMOS D2PAK 40V 2.6 MOHM | Automotive, AEC-Q101, PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 333W (Tj) | P-Channel | - | 40V | 110A (Tc) | 2.6 mOhm @ 80A, 10V | 3V @ 250µA | 255nC @ 10V | 8320pF @ 20V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,264
有现货
|
ON Semiconductor | MOSFET P-CH 40V 110A D2PAK | Automotive, AEC-Q101, PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 333W (Tj) | P-Channel | - | 40V | 110A (Tc) | 2.6 mOhm @ 80A, 10V | 3V @ 250µA | 255nC @ 10V | 8320pF @ 20V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,365
有现货
|
IXYS | MOSFET N-CH 200V 188A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 200V | 188A (Tc) | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,065
有现货
|
Infineon Technologies | MOSFET N-CH 100V 192A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,984
有现货
|
Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
833
有现货
|
Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,002
有现货
|
Infineon Technologies | MOSFET N-CH 100V 192A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 441W (Tc) | N-Channel | - | 100V | 192A (Tc) | 4.2 mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | 9500pF @ 50V | 10V | ±20V |