- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,616
有现货
|
Infineon Technologies | MOSFET N-CH TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | - | 80V | 120A (Tc) | 3.4 mOhm @ 100A, 10V | 3.8V @ 108µA | 87nC @ 10V | 6240pF @ 40V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,426
有现货
|
Infineon Technologies | MOSFET N-CH TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 300V | 44A (Tc) | 41 mOhm @ 44A, 10V | 4V @ 270µA | 87nC @ 10V | 7180pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,603
有现货
|
Infineon Technologies | MOSFET N-CH 200V 88A TO220-3 | OptimWatt™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 200V | 88A (Tc) | 10.7 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,535
有现货
|
Infineon Technologies | MOSFET N-CH 200V 88A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 200V | 88A (Tc) | 11 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,251
有现货
|
Infineon Technologies | MOSFET N-CH 200V 84A TO220 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 200V | 84A (Tc) | 12 mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | 6650pF @ 100V | 10V | ±20V |