- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
11 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,393
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 190W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8.5 mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | 2620pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,217
有现货
|
Infineon Technologies | MOSFET N-CH 100V 47A TO220-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,474
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 190W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8.5 mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | 3480pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,529
有现货
|
Infineon Technologies | MOSFET N-CH 30V 80A TO-220 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 188W (Tc) | N-Channel | - | 30V | 80A (Tc) | 4.2 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
847
有现货
|
Infineon Technologies | MOSFET N-CH 100V 47A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
754
有现货
|
Infineon Technologies | MOSFET N-CH 30V 80A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 188W (Tc) | N-Channel | - | 30V | 80A (Tc) | 4.2 mOhm @ 80A, 10V | 2V @ 130µA | 105nC @ 10V | 3900pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,887
有现货
|
Infineon Technologies | MOSFET N-CH 100V 47A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
903
有现货
|
ON Semiconductor | MOSFET P-CH 150V 36A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 294W (Tc) | P-Channel | - | 150V | 36A (Tc) | 90 mOhm @ 18A, 10V | 4V @ 250µA | 105nC @ 10V | 3320pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,009
有现货
|
Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 175W (Tc) | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,720
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 190W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8.5 mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | 2620pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,597
有现货
|
ON Semiconductor | MOSFET P-CH 150V 36A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 294W (Tc) | P-Channel | - | 150V | 36A (Tc) | 90 mOhm @ 18A, 10V | 4V @ 250µA | 105nC @ 10V | 3320pF @ 25V | 10V | ±30V |