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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
20 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IPP070N08N3 G
获得报价
RFQ
1,900
有现货
Infineon Technologies MOSFET N-CH 80V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 136W (Tc) N-Channel - 80V 80A (Tc) 7 mOhm @ 73A, 10V 3.5V @ 73µA 56nC @ 10V 3840pF @ 40V 6V, 10V ±20V
IPI070N08N3 G
获得报价
RFQ
631
有现货
Infineon Technologies MOSFET N-CH 80V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 136W (Tc) N-Channel - 80V 80A (Tc) 7 mOhm @ 73A, 10V 3.5V @ 73µA 56nC @ 10V 3840pF @ 40V 6V, 10V ±20V
IPP80N06S407AKSA1
获得报价
RFQ
1,148
有现货
Infineon Technologies MOSFET N-CH 60V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 79W (Tc) N-Channel - 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IPI80N06S407AKSA1
获得报价
RFQ
3,616
有现货
Infineon Technologies MOSFET N-CH 60V 80A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 79W (Tc) N-Channel - 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IRFU3518-701PBF
获得报价
RFQ
1,521
有现货
Infineon Technologies MOSFET N-CH 80V 38A IPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 80V 38A (Tc) 29 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1710pF @ 25V 10V ±20V
IXTQ26P20P
单位
$4.72
获得报价
RFQ
1,899
有现货
IXYS MOSFET P-CH 200V 26A TO-3P PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) P-Channel - 200V 26A (Tc) 170 mOhm @ 13A, 10V 4V @ 250µA 56nC @ 10V 2740pF @ 25V 10V ±20V
IRFSL23N15DPBF
获得报价
RFQ
1,381
有现货
Infineon Technologies MOSFET N-CH 150V 23A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 136W (Tc) N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V
IRFU3410
获得报价
RFQ
3,670
有现货
Infineon Technologies MOSFET N-CH 100V 31A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V
IPI80N06S407AKSA2
单位
$0.93
获得报价
RFQ
988
有现货
Infineon Technologies MOSFET N-CH 60V 80A TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 79W (Tc) N-Channel - 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IRFSL23N15D
获得报价
RFQ
2,123
有现货
Infineon Technologies MOSFET N-CH 150V 23A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 136W (Tc) N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V
IPP80N06S407AKSA2
单位
$0.86
获得报价
RFQ
1,337
有现货
Infineon Technologies MOSFET N-CH 60V 80A TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 79W (Tc) N-Channel - 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
FDI9409-F085
单位
$1.93
获得报价
RFQ
2,078
有现货
ON Semiconductor MOSFET N-CH 40V Automotive, AEC-Q101, PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 94W (Tj) N-Channel - 40V 80A (Tc) 3.8 mOhm @ 80A, 10V 4V @ 250µA 56nC @ 10V 2980pF @ 25V 10V ±20V
IPP041N04NGXKSA1
单位
$1.28
获得报价
RFQ
1,500
有现货
Infineon Technologies MOSFET N-CH 40V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 94W (Tc) N-Channel - 40V 80A (Tc) 4.1 mOhm @ 80A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V
IPA041N04NGXKSA1
单位
$1.19
获得报价
RFQ
3,246
有现货
Infineon Technologies MOSFET N-CH 40V TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 35W (Tc) N-Channel - 40V 70A (Tc) 4.1 mOhm @ 70A, 10V 4V @ 45µA 56nC @ 10V 4500pF @ 20V 10V ±20V
IPI029N06NAKSA1
单位
$1.98
获得报价
RFQ
3,659
有现货
Infineon Technologies MOSFET N-CH 60V 24A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 3W (Ta), 136W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.9 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 6V, 10V ±20V
IXTH26P20P
单位
$6.60
获得报价
RFQ
1,930
有现货
IXYS MOSFET P-CH 200V 26A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 200V 26A (Tc) 170 mOhm @ 13A, 10V 4V @ 250µA 56nC @ 10V 2740pF @ 25V 10V ±20V
IRFB23N15DPBF
单位
$1.66
获得报价
RFQ
964
有现货
Infineon Technologies MOSFET N-CH 150V 23A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 136W (Tc) N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V
IRFU3410PBF
单位
$1.04
获得报价
RFQ
3,324
有现货
Infineon Technologies MOSFET N-CH 100V 31A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 3W (Ta), 110W (Tc) N-Channel - 100V 31A (Tc) 39 mOhm @ 18A, 10V 4V @ 250µA 56nC @ 10V 1690pF @ 25V 10V ±20V
IXTP26P20P
单位
$5.50
获得报价
RFQ
3,399
有现货
IXYS MOSFET P-CH 200V 26A TO-220 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) P-Channel - 200V 26A (Tc) 170 mOhm @ 13A, 10V 4V @ 250µA 56nC @ 10V 2740pF @ 25V 10V ±20V
IPP029N06NAKSA1
单位
$2.40
获得报价
RFQ
3,091
有现货
Infineon Technologies MOSFET N-CH 60V 24A TO220 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 3W (Ta), 136W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.9 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 6V, 10V ±20V
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