- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
11 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
1,455
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,852
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,026
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,284
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,014
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,796
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,680
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,637
有现货
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
720
有现货
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,006
有现货
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,519
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V |