- Rds开启(最大)@Id,Vgs :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
1,468
有现货
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Infineon Technologies | MOSFET N-CH 55V 100A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | ||
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获得报价 |
655
有现货
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Infineon Technologies | MOSFET N-CH 55V 100A TO263-3-2 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | ||
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获得报价 |
3,061
有现货
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Infineon Technologies | MOSFET N-CH 55V 100A TO263-3-2 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | ||
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获得报价 |
3,287
有现货
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Infineon Technologies | MOSFET N-CH 55V 100A TO263-3-2 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | ||
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获得报价 |
714
有现货
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Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V |