- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,318
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 8A TO263 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 2.1W (Ta), 500W (Tc) | N-Channel | - | 100V | 8A (Ta), 130A (Tc) | 11.7 mOhm @ 20A, 10V | 3.8V @ 250µA | 100nC @ 10V | 4833pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
945
有现货
|
STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 315W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,871
有现货
|
STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 315W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | 12800pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,858
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | 16000pF @ 50V | 6V, 10V | ±20V |