- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
9 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
808
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
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|
获得报价 |
2,945
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,684
有现货
|
Infineon Technologies | MOSFET N CH 100V 35A TO220 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 42W (Tc) | N-Channel | - | 100V | 35A (Tc) | 13.5 mOhm @ 21A, 10V | 4V @ 100µA | 81nC @ 10V | 2998pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,592
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 131A TO-220 | ThunderFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 131A (Tc) | 5.8 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3330pF @ 50V | 7.5V, 10V | ±20V | ||
|
|
获得报价 |
1,695
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 131A D2PK TO263 | ThunderFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 375W (Tc) | N-Channel | - | 100V | 131A (Tc) | 5.6 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3330pF @ 50V | 7.5V, 10V | ±20V | ||
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|
|
获得报价 |
1,327
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 131A TO263 | ThunderFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 375W (Tc) | N-Channel | - | 100V | 131A (Tc) | 5.6 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3330pF @ 50V | 7.5V, 10V | ±20V | ||
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|
|
获得报价 |
1,069
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,108
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
1,265
有现货
|
Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V |
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