- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
643
有现货
|
Infineon Technologies | MOSFET P-CH 100V 15A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,084
有现货
|
Infineon Technologies | MOSFET N-CH 100V 53A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.2 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,587
有现货
|
Infineon Technologies | MOSFET N-CH 100V 53A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,813
有现货
|
Infineon Technologies | MOSFET N-CH 100V 53A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,311
有现货
|
Infineon Technologies | MOSFET P-CH 100V 15A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,803
有现货
|
Infineon Technologies | MOSFET N-CH 100V TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,433
有现货
|
Infineon Technologies | MOSFET P-CH 100V 15A TO252-3 | Automotive, AEC-Q101, SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,187
有现货
|
Infineon Technologies | MOSFET P-CH 100V 15A TO252-3 | Automotive, AEC-Q101, SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,648
有现货
|
Infineon Technologies | MOSFET P-CH 100V 15A TO252-3 | Automotive, AEC-Q101, SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 128W (Tc) | P-Channel | - | 100V | 15A (Tc) | 240 mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | 1280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,695
有现货
|
Infineon Technologies | MOSFET N-CH 100V 53A TO-220 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V |