- 零件状态 :
- FET型 :
- Rds开启(最大)@Id,Vgs :
-
- 160 mOhm @ 8.4A, 10V (1)
- 18 mOhm @ 35A, 10V (1)
- 200 mOhm @ 5.7A, 10V (2)
- 200 mOhm @ 8.4A, 10V (1)
- 23 mOhm @ 28A, 10V (2)
- 26.5 mOhm @ 22A, 10V (2)
- 36 mOhm @ 22A, 10V (1)
- 4.7 mOhm @ 106A, 10V (1)
- 44 mOhm @ 16A, 10V (2)
- 480 mOhm @ 4A, 10V (2)
- 60 mOhm @ 24A, 10V (1)
- 7 mOhm @ 75A, 10V (2)
- 77 mOhm @ 17A, 10V (1)
- 90 mOhm @ 9A, 10V (1)
20 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,362
有现货
|
Infineon Technologies | MOSFET N-CH 100V 130A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 100V | 130A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
644
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,341
有现货
|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
911
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 28A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,485
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 14A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 100V | 14A (Tc) | 160 mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | 670pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,253
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
817
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,755
有现货
|
Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,479
有现货
|
Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,355
有现货
|
Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,218
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,043
有现货
|
Infineon Technologies | MOSFET N-CH 100V 17A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 70W (Tc) | N-Channel | - | 100V | 17A (Tc) | 90 mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | 920pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
941
有现货
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,627
有现货
|
Infineon Technologies | MOSFET N-CH 100V 42A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 160W (Tc) | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,761
有现货
|
Infineon Technologies | MOSFET N-CH 100V 75A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 100V | 75A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | - | - | ||
|
|
获得报价 |
1,839
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,723
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,655
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,708
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,812
有现货
|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V |