- 包装材料 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,381
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,580
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,238
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,443
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,049
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V | |||
|
获得报价 |
813
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | 426pF @ 25V | 10V | ±20V |