- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,861
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250mA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,240
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 160W (Tc) | N-Channel | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,558
有现货
|
IXYS | MOSFET N-CH 100V 101A ISOPLUS220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 160W (Tc) | N-Channel | 100V | 101A (Tc) | 6.3 mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,999
有现货
|
ON Semiconductor | MOSFET N-CH 100V 40A TO-247 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 160W (Tc) | N-Channel | 100V | 40A (Tc) | 40 mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | - | 10V | ±20V | |||
|
获得报价 |
1,770
有现货
|
Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 160W (Tc) | N-Channel | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
|
获得报价 |
647
有现货
|
Infineon Technologies | MOSFET N-CH 100V 59A TO220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,674
有现货
|
ON Semiconductor | MOSFET N-CH 100V 40A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 160W (Tc) | N-Channel | 100V | 40A (Tc) | 40 mOhm @ 40A, 10V | 4V @ 250µA | 300nC @ 20V | - | 10V | ±20V |