- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
15 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
3,271
有现货
|
Infineon Technologies | MOSFET N-CH 100V 43A TO252-3 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 43A (Tc) | 18 mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | ||
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|
获得报价 |
3,910
有现货
|
Infineon Technologies | MOSFET N-CH 100V 43A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 43A (Tc) | 18 mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,826
有现货
|
Infineon Technologies | MOSFET N-CH 100V 43A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 43A (Tc) | 18 mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,202
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
743
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,199
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
658
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,253
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,250
有现货
|
ON Semiconductor | MOSFET N-CH 100V 19A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 75W (Tc) | N-Channel | - | 100V | 19A (Tc) | 100 mOhm @ 9.5A, 10V | 4V @ 250µA | 25nC @ 10V | 780pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
2,304
有现货
|
ON Semiconductor | MOSFET N-CH 100V 19A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 75W (Tc) | N-Channel | - | 100V | 19A (Tc) | 100 mOhm @ 9.5A, 10V | 4V @ 250µA | 25nC @ 10V | 780pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
2,302
有现货
|
Infineon Technologies | MOSFET N-CH 100V 7.6A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 30W (Tc) | N-Channel | - | 100V | 7.6A (Tc) | 200 mOhm @ 4.3A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,191
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
884
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,723
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
628
有现货
|
Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 48W (Tc) | N-Channel | - | 100V | 9.7A (Tc) | 200 mOhm @ 5.7A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V |