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驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
11 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
PHW80NQ10T,127
获得报价
RFQ
3,076
有现货
NXP USA Inc. MOSFET N-CH 100V 80A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 263W (Tc) N-Channel - 100V 80A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 109nC @ 10V 4720pF @ 25V 10V ±20V
IPD082N10N3GBTMA1
获得报价
RFQ
991
有现货
Infineon Technologies MOSFET N-CH 100V 80A TO252-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 125W (Tc) N-Channel - 100V 80A (Tc) 8.2 mOhm @ 73A, 10V 3.5V @ 75µA 55nC @ 10V 3980pF @ 50V 6V, 10V ±20V
SPP80N10L
获得报价
RFQ
3,685
有现货
Infineon Technologies MOSFET N-CH 100V 80A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 250W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
SPI80N10L
获得报价
RFQ
1,452
有现货
Infineon Technologies MOSFET N-CH 100V 80A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 250W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
SPB80N10L
获得报价
RFQ
1,862
有现货
Infineon Technologies MOSFET N-CH 100V 80A D2PAK SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 250W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 58A, 10V 2V @ 2mA 240nC @ 10V 4540pF @ 25V 4.5V, 10V ±20V
IRF8010STRRPBF
获得报价
RFQ
1,413
有现货
Infineon Technologies MOSFET N-CH 100V 80A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 260W (Tc) N-Channel - 100V 80A (Tc) 15 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 3830pF @ 25V 10V ±20V
IXTA80N10T7
获得报价
RFQ
604
有现货
IXYS MOSFET N-CH 100V 80A TO-263-7 TrenchMV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB TO-263-7 (IXTA..7) 230W (Tc) N-Channel - 100V 80A (Tc) 14 mOhm @ 25A, 10V 4.5V @ 100µA 60nC @ 10V 3040pF @ 25V 10V ±30V
Default Photo
获得报价
RFQ
1,153
有现货
Infineon Technologies MOSFET N-CH 100V 80A TO262-3 OptiMOS™ 3 Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel - 100V 80A (Tc) 7.2 mOhm @ 80A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V
IPP072N10N3GHKSA1
获得报价
RFQ
2,742
有现货
Infineon Technologies MOSFET N-CH 100V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 150W (Tc) N-Channel - 100V 80A (Tc) 7.2 mOhm @ 80A, 10V 3.5V @ 90µA 68nC @ 10V 4910pF @ 50V 6V, 10V ±20V
IPP086N10N3GHKSA1
获得报价
RFQ
2,162
有现货
Infineon Technologies MOSFET N-CH 100V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 125W (Tc) N-Channel - 100V 80A (Tc) 8.6 mOhm @ 73A, 10V 3.5V @ 75µA 55nC @ 10V 3980pF @ 50V 6V, 10V ±20V
STB60NF10-1
单位
$2.89
获得报价
RFQ
1,848
有现货
STMicroelectronics MOSFET N-CH 100V 80A I2PAK STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 300W (Tc) N-Channel - 100V 80A (Tc) 23 mOhm @ 40A, 10V 4V @ 250µA 104nC @ 10V 4270pF @ 25V 10V ±20V
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