- 供应商设备包 :
- FET型 :
- Vgs（th）（最大）@Id :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,254
有现货
|
Infineon Technologies | MOSFET N-CH 100V 70A TO220-3 | SIPMOS® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 250W (Tc) | N-Channel | - | 100V | 70A (Tc) | 16 mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | 4540pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,803
有现货
|
Infineon Technologies | MOSFET N-CH 100V TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 100W (Tc) | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,480
有现货
|
ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 66W (Tc) | P-Channel | - | 100V | 10.5A (Tc) | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | 1035pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
982
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO-220 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,982
有现货
|
STMicroelectronics | MOSFET N-CH 100V 40A TO-220 | STripFET™ II | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 115W (Tc) | N-Channel | - | 100V | 40A (Tc) | 35 mOhm @ 17.5A, 10V | 4V @ 250µA | 55nC @ 10V | 1550pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,879
有现货
|
Infineon Technologies | MOSFET N-CH 100V 120A TO220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 370W (Tc) | N-Channel | - | 100V | 120A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | 9620pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
3,519
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,003
有现货
|
ON Semiconductor | MOSFET N-CH 100V 80A TO-220AB | PowerTrench® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 310W (Tc) | N-Channel | - | 100V | 12A (Ta), 80A (Tc) | 9 mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,480
有现货
|
Infineon Technologies | MOSFET N-CH 100V 97A TO-220AB | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
611
有现货
|
Infineon Technologies | MOSFET N-CH 100V 70A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 125W (Tc) | N-Channel | - | 100V | 70A (Tc) | 11.6 mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | 4355pF @ 25V | 10V | ±20V |
粤ICP备2022113175号-1