- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
655
有现货
|
Infineon Technologies | MOSFET N-CH 100V 180A D2PAK-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 375W (Tc) | N-Channel | - | 100V | 180A (Tc) | 1.7 mOhm @ 100A, 10V | 3.8V @ 279µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,858
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | 16000pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,223
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 2 mOhm @ 150A, 10V | 3.5V @ 272µA | 156nC @ 10V | 11200pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,597
有现货
|
Infineon Technologies | MOSFET N-CH 100V 120A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 375W (Tc) | N-Channel | - | 100V | 120A (Tc) | 2 mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | 15600pF @ 50V | 6V, 10V | ±20V |