- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,366
有现货
|
Infineon Technologies | MOSFET N-CH 60V 179A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | DIRECTFET™ M4 | 2.5W (Ta), 63W (Tc) | N-Channel | - | 60V | 14A (Ta), 68A (Tc) | 7 mOhm @ 41A, 10V | 4.9V @ 150µA | 53nC @ 10V | 2170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,653
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | DIRECTFET™ M4 | 2.5W (Ta), 62.5W (Tc) | N-Channel | - | 100V | 10A (Ta) | 10 mOhm @ 31A, 10V | 2.5V @ 150µA | 66nC @ 4.5V | 5305pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,246
有现货
|
Infineon Technologies | MOSFET N-CH 40V 112A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | DIRECTFET™ M4 | 2.5W (Ta), 63W (Tc) | N-Channel | - | 40V | 179A (Tc) | 3 mOhm @ 67A, 10V | 2.5V @ 150µA | 78nC @ 4.5V | 5055pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
2,062
有现货
|
Infineon Technologies | MOSFET N-CH 40V 179A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | DIRECTFET™ M4 | 2.5W (Ta), 63W (Tc) | N-Channel | - | 40V | 22A (Ta), 108A (Tc) | 3 mOhm @ 65A, 10V | 4V @ 150µA | 108nC @ 10V | 4267pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,019
有现货
|
Infineon Technologies | MOSFET N-CH 40V 137A AUTO | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | DIRECTFET™ M4 | 2.5W (Ta), 63W (Tc) | N-Channel | - | 40V | 27A (Ta), 137A (Tc) | 1.9 mOhm @ 85A, 10V | 3.9V @ 150µA | 204nC @ 10V | 6867pF @ 25V | 10V | ±20V |