- 供应商设备包 :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
-
- 108A (Tc) (1)
- 115A (Tc) (1)
- 150A (Tc) (1)
- 160A (Tc) (2)
- 188A (Tc) (1)
- 200A (Tc) (2)
- 220A (Tc) (2)
- 240A (Tc) (1)
- 245A (Tc) (1)
- 260A (Tc) (1)
- 295A (Tc) (1)
- 310A (Tc) (1)
- 32A (Tc) (1)
- 33A (Tc) (1)
- 360A (Tc) (1)
- 420A (Tc) (1)
- 435A (Tc) (1)
- 480A (Tc) (1)
- 49A (Tc) (1)
- 51A (Tc) (1)
- 550A (Tc) (1)
- 600A (Tc) (1)
- 660A (Tc) (1)
- 78A (Tc) (1)
- Rds开启(最大)@Id,Vgs :
-
- 0.85 mOhm @ 100A, 10V (1)
- 1.05 mOhm @ 100A, 10V (1)
- 1.3 mOhm @ 100A, 10V (1)
- 1.9 mOhm @ 100A, 10V (1)
- 10 mOhm @ 100A (2)
- 10.5 mOhm @ 105A, 10V (1)
- 100 mOhm @ 20A, 20V (1)
- 11 mOhm @ 90A, 10V (1)
- 14 mOhm @ 80A, 10V (1)
- 18 mOhm @ 70A, 10V (1)
- 2.15 mOhm @ 200A, 10V (1)
- 2.3 mOhm @ 60A, 10V (1)
- 2.6 mOhm @ 180A, 10V (1)
- 320 mOhm @ 25A, 10V (1)
- 4 mOhm @ 60A, 10V (1)
- 45 mOhm @ 60A, 20V (1)
- 5.2 mOhm @ 60A, 10V (2)
- 5.5 mOhm @ 50A, 10V (2)
- 55 mOhm @ 40A, 20V (1)
- 6.5 mOhm @ 60A, 10V (1)
- 7 mOhm @ 150A, 10V (1)
- 7.5 mOhm @ 500mA, 10V (1)
- 7.5 mOhm @ 60A, 10V (1)
- 70 mOhm @ 32.5A, 20V (1)
- 栅极电荷(Qg)(最大)@Vgs :
-
- 125nC @ 20V (1)
- 130nC @ 20V (1)
- 152nC @ 10V (1)
- 161nC @ 10V (1)
- 235nC @ 10V (1)
- 235nC @ 20V (1)
- 240nC @ 10V (2)
- 255nC @ 10V (1)
- 270nC @ 20V (1)
- 279nC @ 10V (1)
- 350nC @ 10V (1)
- 375nC @ 10V (1)
- 378nC @ 10V (1)
- 400nC @ 10V (1)
- 460nC @ 10V (1)
- 505nC @ 10V (1)
- 545nC @ 10V (1)
- 560nC @ 10V (1)
- 590nC @ 10V (1)
- 595nC @ 10V (1)
- 640nC @ 10V (1)
- 670nC @ 10V (1)
- 715nC @ 10V (1)
- 860nC @ 10V (1)
- 输入电容(Ciss)(最大)@Vds :
-
- 10720pF @ 50V (1)
- 14400pF @ 800V (2)
- 17300pF @ 25V (1)
- 18200pF @ 25V (1)
- 18600pF @ 25V (1)
- 21000pF @ 50V (1)
- 23000pF @ 25V (1)
- 24000pF @ 25V (1)
- 2560pF @ 1000V (1)
- 28000pF @ 25V (1)
- 32000pF @ 25V (1)
- 36000pF @ 25V (1)
- 3950pF @ 700V (1)
- 40000pF @ 25V (2)
- 41000pF @ 25V (1)
- 44000pF @ 25V (1)
- 45000pF @ 25V (1)
- 47000pF @ 25V (1)
- 47500pF @ 25V (1)
- 7000pF @ 25V (1)
- 7500pF @ 25V (1)
- 7600pF @ 25V (1)
- 9400pF @ 25V (1)
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
27 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,748
有现货
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 273W (Tc) | N-Channel | - | 1200V | 51A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | |||
|
获得报价 |
2,737
有现货
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 700V | 49A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | |||
|
获得报价 |
2,766
有现货
|
IXYS | MOSFET N-CH 170V 245A SOT-227 | GigaMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1090W (Tc) | N-Channel | - | 170V | 245A (Tc) | 6.5 mOhm @ 60A, 10V | 5V @ 8mA | 400nC @ 10V | 24000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,307
有现货
|
Microsemi Corporation | MOSFET N-CH 1200V 33A SOT-227 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 960W (Tc) | N-Channel | - | 1200V | 33A (Tc) | 320 mOhm @ 25A, 10V | 5V @ 2.5mA | 560nC @ 10V | 18200pF @ 25V | 10V | ±30V | |||
|
获得报价 |
623
有现货
|
Microsemi Corporation | MOSFET N-CH 700V SOT227 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 273W (Tc) | N-Channel | - | 700V | 78A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | |||
|
获得报价 |
3,730
有现货
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 200V 220A SOT-227 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 789W (Tc) | N-Channel | - | 200V | 220A (Tc) | 7 mOhm @ 150A, 10V | 5.1V @ 500µA | 350nC @ 10V | 21000pF @ 50V | 10V | ±30V | |||
|
获得报价 |
1,089
有现货
|
IXYS | MOSFET N-CH 100V 295A SOT-227 | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 100V | 295A (Tc) | 5.5 mOhm @ 50A, 10V | 5V @ 8mA | 279nC @ 10V | 23000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,624
有现货
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 200V 108A | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 405W (Tc) | N-Channel | - | 200V | 108A (Tc) | 14 mOhm @ 80A, 10V | 5.5V @ 250µA | 161nC @ 10V | 10720pF @ 50V | 10V | ±30V | |||
|
获得报价 |
3,868
有现货
|
IXYS | MOSFET N-CH 100V 200A SOT-227 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 550W (Tc) | N-Channel | - | 100V | 200A (Tc) | 5.5 mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,642
有现货
|
IXYS | MOSFET N-CH 150V 240A SOT227 | GigaMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 830W (Tc) | N-Channel | - | 150V | 240A (Tc) | 5.2 mOhm @ 60A, 10V | 5V @ 8mA | 460nC @ 10V | 32000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,742
有现货
|
GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | - | Not For New Designs | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1700V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | |||
|
获得报价 |
2,486
有现货
|
IXYS | MOSFET N-CH 200V 115A SOT227B | PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 680W (Tc) | N-Channel | - | 200V | 115A (Tc) | 18 mOhm @ 70A, 10V | 5V @ 4mA | 240nC @ 10V | 7500pF @ 25V | 10V, 15V | ±20V | |||
|
获得报价 |
3,684
有现货
|
IXYS | MOSFET N-CH 40V 600A SOT-227 | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 940W (Tc) | N-Channel | - | 40V | 600A (Tc) | 1.05 mOhm @ 100A, 10V | 3.5V @ 250µA | 590nC @ 10V | 40000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,366
有现货
|
Microsemi Corporation | MOSFET N-CH 1200V 32A SOT227 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 165W (Tc) | N-Channel | - | 1200V | 32A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
|
获得报价 |
3,376
有现货
|
GeneSiC Semiconductor | TRANS SJT 1200V 160A SOT227 | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 535W (Tc) | - | - | 1200V | 160A (Tc) | 10 mOhm @ 100A | - | - | 14400pF @ 800V | - | - | |||
|
获得报价 |
1,336
有现货
|
IXYS | MOSFET N-CH 100V 200A SOT-227B | Polar™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 680W (Tc) | N-Channel | - | 100V | 200A (Tc) | 7.5 mOhm @ 500mA, 10V | 5V @ 8mA | 235nC @ 10V | 7600pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,183
有现货
|
IXYS | MOSFET N-CH 55V 550A SOT-227 | GigaMOS™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 940W (Tc) | N-Channel | - | 55V | 550A (Tc) | 1.3 mOhm @ 100A, 10V | 4V @ 250µA | 595nC @ 10V | 40000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,365
有现货
|
IXYS | MOSFET N-CH 200V 188A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 200V | 188A (Tc) | 10.5 mOhm @ 105A, 10V | 4.5V @ 8mA | 255nC @ 10V | 18600pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,656
有现货
|
IXYS | MOSFET N-CH 100V 420A SOT-227 | GigaMOS™ HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 100V | 420A (Tc) | 2.3 mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | 47000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,521
有现货
|
Vishay Semiconductor Diodes Division | POWER MODULE 100V 435A SOT-227 | TrenchFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 652W (Tc) | N-Channel | - | 100V | 435A (Tc) | 2.15 mOhm @ 200A, 10V | 3.8V @ 750µA | 375nC @ 10V | 17300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,310
有现货
|
IXYS | MOSFET N-CH 150V 150A SOT-227B | PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 680W (Tc) | N-Channel | - | 150V | 150A (Tc) | 11 mOhm @ 90A, 10V | 5V @ 4mA | 240nC @ 10V | 7000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,717
有现货
|
IXYS | MOSFET N-CH 170V 260A SOT227 | GigaMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 170V | 260A (Tc) | 5.2 mOhm @ 60A, 10V | 5V @ 8mA | 640nC @ 10V | 45000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,912
有现货
|
IXYS | MOSFET N-CH 150V 310A SOT227 | GigaMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1070W (Tc) | N-Channel | - | 150V | 310A (Tc) | 4 mOhm @ 60A, 10V | 5V @ 8mA | 715nC @ 10V | 47500pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,475
有现货
|
IXYS | MOSFET N-CH 200V 220A SOT-227 | GigaMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1090W (Tc) | N-Channel | - | 200V | 220A (Tc) | 7.5 mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | 28000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,353
有现货
|
IXYS | 40V/660A TRENCHT4 PWR MOSFET SOT | TrenchT4™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 1040W (Tc) | N-Channel | Current Sensing | 40V | 660A (Tc) | 0.85 mOhm @ 100A, 10V | 4V @ 250µA | 860nC @ 10V | 44000pF @ 25V | 10V | ±15V | |||
|
获得报价 |
1,101
有现货
|
IXYS | MOSFET N-CH 75V 480A SOT227 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 940W (Tc) | N-Channel | - | 75V | 480A (Tc) | 1.9 mOhm @ 100A, 10V | 5V @ 8mA | 545nC @ 10V | 41000pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,766
有现货
|
IXYS | MOSFET N-CH 100V 360A SOT-227B | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 830W (Tc) | N-Channel | - | 100V | 360A (Tc) | 2.6 mOhm @ 180A, 10V | 4.5V @ 250µA | 505nC @ 10V | 36000pF @ 25V | 10V | ±20V |