- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,148
有现货
|
Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 79W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,616
有现货
|
Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 79W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.4 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,945
有现货
|
Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 79W (Tc) | N-Channel | - | 60V | 90A (Tc) | 6.9 mOhm @ 90A, 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,052
有现货
|
Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 79W (Tc) | N-Channel | - | 60V | 80A (Tc) | 7.1 mOhm @ 80A, 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | 10V | ±20V |