- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,069
有现货
|
STMicroelectronics | MOSFET N-CHANNEL 800V 12A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | |||
|
获得报价 |
2,803
有现货
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | |||
|
获得报价 |
3,045
有现货
|
STMicroelectronics | MOSFET N-CH 950V 8A TO-220 | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 950V | 8A (Tc) | 800 mOhm @ 4A, 10V | 5V @ 100µA | 22nC @ 10V | 630pF @ 100V | 10V | ±30V | |||
|
获得报价 |
2,343
有现货
|
STMicroelectronics | MOSFET N-CH 1050V 6A TO-220AB | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 1050V | 6A (Tc) | 1.3 Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 545pF @ 100V | 10V | 30V |