- 系列 :
- 工作温度 :
- FET型 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
- Vgs（最大值） :
6 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,073
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSVI | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | 970pF @ 10V | 4.5V, 10V | +20V, -25V | ||
|
|
|
获得报价 |
3,070
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSVI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | 970pF @ 10V | 4.5V, 10V | +20V, -25V | ||
|
|
获得报价 |
3,959
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 25A 8-SOPA | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 60V | 25A (Ta) | 21 mOhm @ 13A, 10V | 2.3V @ 1mA | 22nC @ 10V | 1375pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,201
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,549
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
850
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 81W (Tc) | N-Channel | - | 60V | 60A (Tc) | 13.5 mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | 1875pF @ 30V | 4.5V, 10V | ±20V |
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