- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,409
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A VS6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5A (Ta) | 55 mOhm @ 2.5A, 4.5V | 1.2V @ 200µA | 10nC @ 5V | 690pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
2,358
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
676
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
2,334
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 60A 8SOP ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | P-Channel | - | 20V | 60A (Tc) | 1.7 mOhm @ 30A, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
2,536
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
2,961
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V | ||
|
|
获得报价 |
2,757
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 42W (Tc) | P-Channel | - | 20V | 36A (Tc) | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | 4300pF @ 10V | 2.5V, 4.5V | ±12V |