- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,612
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 5A PW-MOLD | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | - | 60V | 5A (Ta) | 190 mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,464
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 5A PW-MOLD | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | - | 60V | 5A (Ta) | 190 mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,290
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 5A PW-MOLD | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | - | 60V | 5A (Ta) | 190 mOhm @ 2.5A, 10V | 2V @ 1mA | 22nC @ 10V | 630pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
1,616
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,305
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
1,287
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
1,974
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,375
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,662
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V |