- 工作温度 :
- 供应商设备包 :
- 功耗(最大) :
- FET型 :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,015
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 60V 5A PW-MOLD | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | P-Channel | - | 60V | 5A (Ta) | 170 mOhm @ 2.5A, 10V | 2V @ 1mA | 15nC @ 10V | 700pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,687
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,261
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 27W (Tc) | N-Channel | - | 40V | 20A (Ta) | 29 mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | 985pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,960
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,864
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,727
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V |