- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,927
有现货
|
STMicroelectronics | MOSFET N-CH 20V 160A POWERSO-10 | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 210W (Tc) | N-Channel | - | 20V | 160A (Tc) | 2.5 mOhm @ 80A, 10V | 1V @ 250µA | 160nC @ 10V | 4800pF @ 15V | 5V, 10V | ±15V | ||
|
|
获得报价 |
2,850
有现货
|
STMicroelectronics | MOSFET N-CH 30V 160A POWERSO-10 | STripFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 210W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.8 mOhm @ 80A, 10V | 1V @ 250µA | 140nC @ 10V | 4700pF @ 25V | 5V, 10V | ±15V | ||
|
|
获得报价 |
1,639
有现货
|
STMicroelectronics | MOSFET N-CH 55V 250A POWERSO-10 | STripFET™ III | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 300W (Tc) | N-Channel | - | 55V | 200A (Tc) | 2.2 mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,877
有现货
|
STMicroelectronics | MOSFET N-CH 55V 200A POWERSO-10 | STripFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | 300W (Tc) | N-Channel | - | 55V | 200A (Tc) | 2.5 mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | 10V | ±20V |