- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
713
有现货
|
Infineon Technologies | MOSFET N-CH 200V 7A TO-252 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 40W (Tc) | N-Channel | - | 200V | 7A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,556
有现货
|
Infineon Technologies | MOSFET N-CH 200V 34A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,472
有现货
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,463
有现货
|
Infineon Technologies | MOSFET N-CH 200V 24A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,381
有现货
|
Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,631
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,363
有现货
|
Infineon Technologies | MOSFET N-CH 200V 7A TO252 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 40W (Tc) | N-Channel | - | 200V | 7A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,350
有现货
|
Infineon Technologies | MOSFET N-CH 200V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3W (Ta), 140W (Tc) | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,448
有现货
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,466
有现货
|
Infineon Technologies | MOSFET N-CH 200V 34A | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 200V | 34A (Tc) | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | 2350pF @ 100V | 10V | ±20V |