- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
629
有现货
|
Infineon Technologies | MOSFET N-CH 800V 17A TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 101W (Tc) | N-Channel | Super Junction | 800V | 17A (Tc) | 280 mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | 1200pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
1,677
有现货
|
Infineon Technologies | MOSFET N-CH 800V 11A DPAK | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 73W (Tc) | N-Channel | Super Junction | 800V | 11A (Tc) | 450 mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24nC @ 10V | 770pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
3,571
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.5A DPAK | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 13W (Tc) | N-Channel | Super Junction | 800V | 1.5A (Tc) | 4.5 Ohm @ 400mA, 10V | 3.5V @ 200µA | 4nC @ 10V | 80pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
1,026
有现货
|
Infineon Technologies | MOSFET N-CH 800V 4A DPAK | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | 250pF @ 500V | 10V | ±20V |