- 系列 :
- 栅极电荷(Qg)(最大)@Vgs :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
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获得报价 |
2,141
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7A 8-SOIC | - | Discontinued at Digi-Key | Tube | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 90nC @ 4.5V | 760pF @ 15V | ||
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|
获得报价 |
1,970
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7A 8-SOIC | HEXFET® | Not For New Designs | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | ||
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获得报价 |
918
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7A 8-SOIC | HEXFET® | Not For New Designs | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V | ||
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获得报价 |
2,499
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 9.7A 8-SOIC | HEXFET® | Not For New Designs | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.7A | 15.5 mOhm @ 9.7A, 10V | 2.35V @ 25µA | 9nC @ 4.5V | 760pF @ 15V |