- 系列 :
- 供应商设备包 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,616
有现货
|
Diodes Incorporated | MOSFET 2P-CH 30V 8-MSOP | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 1.04W | 8-MSOP | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 185 mOhm @ 1.2A, 10V | 1V @ 250µA (Min) | 7nC @ 10V | 270pF @ 25V | ||
|
|
获得报价 |
3,344
有现货
|
Diodes Incorporated | MOSFET 2P-CH 30V 8-MSOP | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 1.04W | 8-MSOP | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 185 mOhm @ 1.2A, 10V | 1V @ 250µA (Min) | 7nC @ 10V | 270pF @ 25V | ||
|
|
获得报价 |
1,876
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 3.6A 2X2 PQFN | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | ||
|
|
获得报价 |
908
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 3.6A 2X2 PQFN | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V | ||
|
|
获得报价 |
1,186
有现货
|
Infineon Technologies | MOSFET 2N-CH 30V 3.6A PQFN | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.8nC @ 4.5V | 270pF @ 25V |