6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
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获得报价 |
2,395
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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获得报价 |
1,289
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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获得报价 |
2,284
有现货
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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获得报价 |
963
有现货
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EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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获得报价 |
1,024
有现货
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EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
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获得报价 |
1,077
有现货
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V |