- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,380
有现货
|
Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 1.7W | 8-DFN (3x2) | N and P-Channel | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | ||
|
|
获得报价 |
3,927
有现货
|
Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 1.7W | 8-DFN (3x2) | N and P-Channel | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | ||
|
|
获得报价 |
1,818
有现货
|
Diodes Incorporated | MOSFET N/P-CH 30V 2.9A/2.1A 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 1.7W | 8-DFN (3x2) | N and P-Channel | Logic Level Gate | 30V | 2.9A, 2.1A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V | ||
|
|
获得报价 |
2,743
有现货
|
Diodes Incorporated | MOSFET 2N-CH 20V 2.9A DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 1.7W | 8-DFN (3x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.9A | 120 mOhm @ 4A, 4.5V | 3V @ 250µA | 3.1nC @ 4.5V | 299pF @ 15V | ||
|
|
获得报价 |
2,905
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 13A/15A 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 2.5W | 8-DFN-EP (3x3) | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 13A, 15A | 10.2 mOhm @ 13A, 10V | 2.2V @ 250µA | 11nC @ 10V | 485pF @ 15V | ||
|
|
获得报价 |
2,010
有现货
|
Diodes Incorporated | MOSFET 2N-CH 30V 2.9A DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 1.7W | 8-DFN (3x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 120 mOhm @ 2.5A, 10V | 3V @ 250µA | 3.9nC @ 10V | 190pF @ 25V |