- 栅极电荷(Qg)(最大)@Vgs :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
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获得报价 |
3,203
有现货
|
Microsemi Corporation | MOSFET 2N-CH 1200V 295A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 1250W | 2 N Channel (Phase Leg) | Standard | 1200V (1.2kV) | 295A | 9 mOhm @ 200A, 20V | 2.4V @ 40mA (Typ) | 644nC @ 20V | 11000pF @ 1000V | ||
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获得报价 |
3,198
有现货
|
Microsemi Corporation | MOSFET 2N-CH 1200V 220A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 925W | 2 N Channel (Phase Leg) | Standard | 1200V (1.2kV) | 220A | 12 mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | ||
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获得报价 |
1,364
有现货
|
Microsemi Corporation | MOSFET 4N-CH 1200V 55A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 250W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | ||
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获得报价 |
968
有现货
|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | ||
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获得报价 |
991
有现货
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Microsemi Corporation | MOSFET 4N-CH 1200V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 125W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 28A | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | ||
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获得报价 |
1,097
有现货
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Microsemi Corporation | MOSFET 2N-CH 1200V 105A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 500W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 105A | 25 mOhm @ 80A, 20V | 2.2V @ 4mA (Typ) | 197nC @ 20V | 3800pF @ 1000V |