- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,839
有现货
|
Infineon Technologies | MOSFET N-CH 75V 104A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 140W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,087
有现货
|
Infineon Technologies | MOSFET N-CH 75V 85A TO262 | HEXFET®, StrongIRFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 140W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
1,293
有现货
|
Vishay Siliconix | MOSFET N-CH 55V 110A TO263 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 157W (Tc) | N-Channel | - | 55V | 110A (Tc) | 6 mOhm @ 30A, 10V | 2.5V @ 250µA | 110nC @ 10V | 4440pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,607
有现货
|
Infineon Technologies | MOSFET N-CH 75V 104A D2PAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 140W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
2,567
有现货
|
Infineon Technologies | MOSFET N-CH 75V 104A D2PAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 140W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
1,742
有现货
|
Infineon Technologies | MOSFET N-CH 75V 104A D2PAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 140W (Tc) | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V |