- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
3,209
有现货
|
Infineon Technologies | MOSFET N-CH 650V TO247 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 101W (Tc) | N-Channel | - | 650V | 18A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,449
有现货
|
Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 101W (Tc) | N-Channel | - | 650V | 18A (Ta) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,563
有现货
|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | - | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
3,930
有现货
|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | - | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,297
有现货
|
Infineon Technologies | MOSFET N-CH 650V 15A 4VSON | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 102W (Tc) | N-Channel | - | 650V | 15A (Tc) | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
3,984
有现货
|
Infineon Technologies | MOSFET N-CH 650V TO220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 32W (Tc) | N-Channel | - | 650V | 10A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,143
有现货
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
619
有现货
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,714
有现货
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
797
有现货
|
Infineon Technologies | MOSFET N-CH 650V 18A TO220 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 101W (Tc) | N-Channel | - | 650V | 18A (Tc) | 125 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V |