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漏极-源极电压(Vdss) :
25°C时的电流-连续漏极(Id) :
栅极电荷(Qg)(最大)@Vgs :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
13 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
AUIRLR3915
获得报价
RFQ
779
有现货
Infineon Technologies MOSFET N-CH 55V 61A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
STP8NK85Z
获得报价
RFQ
2,449
有现货
STMicroelectronics MOSFET N-CH 850V 6.7A TO-220 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel - 850V 6.7A (Tc) 1.4 Ohm @ 3.35A, 10V 4.5V @ 100µA 60nC @ 10V 1870pF @ 25V 10V ±30V
STF8NK85Z
获得报价
RFQ
2,103
有现货
STMicroelectronics MOSFET N-CH 850V 6.7A TO-220FP SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 35W (Tc) N-Channel - 850V 6.7A (Tc) 1.4 Ohm @ 3.35A, 10V 4.5V @ 100µA 60nC @ 10V 1870pF @ 25V 10V ±30V
IRLU3915PBF
单位
$0.51
获得报价
RFQ
3,144
有现货
Infineon Technologies MOSFET N-CH 55V 30A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
IRLR3915PBF
获得报价
RFQ
2,904
有现货
Infineon Technologies MOSFET N-CH 55V 30A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
PHP33NQ20T,127
单位
$1.53
获得报价
RFQ
1,575
有现货
Nexperia USA Inc. MOSFET N-CH 200V 32.7A TO220AB TrenchMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 200V 32.7A (Tc) 77 mOhm @ 15A, 10V 4V @ 1mA 32.2nC @ 10V 1870pF @ 25V 10V ±20V
IXFH12N50F
单位
$9.13
获得报价
RFQ
2,657
有现货
IXYS-RF MOSFET N-CH 500V 12A TO247 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 180W (Tc) N-Channel - 500V 12A (Tc) 400 mOhm @ 6A, 10V 5.5V @ 2.5mA 54nC @ 10V 1870pF @ 25V 10V ±20V
PHB33NQ20T,118
获得报价
RFQ
1,954
有现货
Nexperia USA Inc. MOSFET N-CH 200V 32.7A D2PAK TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 200V 32.7A (Tc) 77 mOhm @ 15A, 10V 4V @ 1mA 32.2nC @ 10V 1870pF @ 25V 10V ±20V
PHB33NQ20T,118
单位
$1.53
获得报价
RFQ
1,203
有现货
Nexperia USA Inc. MOSFET N-CH 200V 32.7A D2PAK TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 200V 32.7A (Tc) 77 mOhm @ 15A, 10V 4V @ 1mA 32.2nC @ 10V 1870pF @ 25V 10V ±20V
PHB33NQ20T,118
单位
$0.70
获得报价
RFQ
967
有现货
Nexperia USA Inc. MOSFET N-CH 200V 32.7A D2PAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 200V 32.7A (Tc) 77 mOhm @ 15A, 10V 4V @ 1mA 32.2nC @ 10V 1870pF @ 25V 10V ±20V
IRLR3915TRPBF
获得报价
RFQ
3,320
有现货
Infineon Technologies MOSFET N-CH 55V 30A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
IRLR3915TRPBF
单位
$1.55
获得报价
RFQ
3,847
有现货
Infineon Technologies MOSFET N-CH 55V 30A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
IRLR3915TRPBF
单位
$0.60
获得报价
RFQ
1,706
有现货
Infineon Technologies MOSFET N-CH 55V 30A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 55V 30A (Tc) 14 mOhm @ 30A, 10V 3V @ 250µA 92nC @ 10V 1870pF @ 25V 5V, 10V ±16V
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