- 功耗（最大） :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,743
有现货
|
Infineon Technologies | MOSFET N-CH 650V 12A TO-247 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,764
有现货
|
Infineon Technologies | MOSFET N-CH 650V 12A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,305
有现货
|
Infineon Technologies | MOSFET N-CH 650V 12A TO263-3 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,615
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,444
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,552
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,650
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (SH) | 10-PolarPAK® (SH) | 5.2W (Ta), 104W (Tc) | N-Channel | - | 200V | 18.3A (Tc) | 130 mOhm @ 4.1A, 10V | 4.5V @ 250µA | 41nC @ 10V | 1200pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,455
有现货
|
Infineon Technologies | MOSFET N-CH 650V 12A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V |
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