- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,580
有现货
|
Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,166
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,524
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,618
有现货
|
Infineon Technologies | MOSFET N-CH 600V 4VSON | CoolMOS™ P6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 151W (Tc) | N-Channel | - | 600V | 19.2A (Tc) | 210 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,345
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO263-3 | CoolMOS™ P6 | Last Time Buy | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,037
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO263-3 | CoolMOS™ P6 | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,213
有现货
|
Infineon Technologies | MOSFET N-CH 600V TO263-3 | CoolMOS™ P6 | Last Time Buy | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
925
有现货
|
Infineon Technologies | MOSFET N-CH 600V 9.5A TO220-FP | CoolMOS™ P6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 34W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 37nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,615
有现货
|
Infineon Technologies | MOSFET N-CH 600V 20.2A TO247 | CoolMOS™ P6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,949
有现货
|
Infineon Technologies | MOSFET N-CH 600V 20.2A TO220 | CoolMOS™ P6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,587
有现货
|
Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,623
有现货
|
Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,518
有现货
|
Infineon Technologies | MOSFET N CH 200V 3.7A 8-SO | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 3.7A (Ta) | 78 mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | 10V | ±20V |