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9 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
STF30NM60ND
获得报价
RFQ
921
有现货
STMicroelectronics MOSFET N-CH 600V 25A TO-220FP FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 40W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±30V
STB30NM60ND
获得报价
RFQ
2,059
有现货
STMicroelectronics MOSFET N-CH 600V 25A D2PAK FDmesh™ II Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
STB30NM60ND
获得报价
RFQ
3,846
有现货
STMicroelectronics MOSFET N-CH 600V 25A D2PAK FDmesh™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
STB30NM60ND
获得报价
RFQ
2,380
有现货
STMicroelectronics MOSFET N-CH 600V 25A D2PAK FDmesh™ II Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
STW30NM60ND
获得报价
RFQ
3,791
有现货
STMicroelectronics MOSFET N-CH 600V 25A TO-247 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
STP30NM60ND
获得报价
RFQ
3,704
有现货
STMicroelectronics MOSFET N-CH 600V 25A TO-220 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
TPH8R80ANH,L1Q
获得报价
RFQ
696
有现货
Toshiba Semiconductor and Storage MOSFET N CH 100V 32A 8-SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 61W (Tc) N-Channel - 100V 32A (Tc) 8.8 mOhm @ 16A, 10V 4V @ 500µA 33nC @ 10V 2800pF @ 50V 10V ±20V
TPH8R80ANH,L1Q
单位
$1.71
获得报价
RFQ
3,197
有现货
Toshiba Semiconductor and Storage MOSFET N CH 100V 32A 8-SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 61W (Tc) N-Channel - 100V 32A (Tc) 8.8 mOhm @ 16A, 10V 4V @ 500µA 33nC @ 10V 2800pF @ 50V 10V ±20V
TPH8R80ANH,L1Q
单位
$0.69
获得报价
RFQ
2,208
有现货
Toshiba Semiconductor and Storage MOSFET N CH 100V 32A 8-SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 61W (Tc) N-Channel - 100V 32A (Tc) 8.8 mOhm @ 16A, 10V 4V @ 500µA 33nC @ 10V 2800pF @ 50V 10V ±20V
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