- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,073
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSVI | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | 970pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
获得报价 |
3,070
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSVI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | 970pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
获得报价 |
3,803
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
获得报价 |
1,664
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
获得报价 |
3,572
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
获得报价 |
3,532
有现货
|
Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.7W (Ta), 2.7W (Tc) | P-Channel | - | 20V | 4A (Ta), 5.3A (Tc) | 47 mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 30nC @ 8V | 970pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
3,950
有现货
|
Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.7W (Ta), 2.7W (Tc) | P-Channel | - | 20V | 4A (Ta), 5.3A (Tc) | 47 mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 30nC @ 8V | 970pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
获得报价 |
915
有现货
|
Vishay Siliconix | MOSFET P-CHAN 20V TSOP6S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.7W (Ta), 2.7W (Tc) | P-Channel | - | 20V | 4A (Ta), 5.3A (Tc) | 47 mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 30nC @ 8V | 970pF @ 10V | 2.5V, 4.5V | ±12V |