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9 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IPI028N08N3GHKSA1
获得报价
RFQ
893
有现货
Infineon Technologies MOSFET N-CH 80V 100A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 300W (Tc) N-Channel - 80V 100A (Tc) 2.8 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB019N08N3GATMA1
获得报价
RFQ
1,928
有现货
Infineon Technologies MOSFET N-CH 80V 180A TO263-7 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB019N08N3GATMA1
单位
$5.86
获得报价
RFQ
3,188
有现货
Infineon Technologies MOSFET N-CH 80V 180A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB019N08N3GATMA1
单位
$2.84
获得报价
RFQ
1,867
有现货
Infineon Technologies MOSFET N-CH 80V 180A TO263-7 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 300W (Tc) N-Channel - 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPA028N08N3GXKSA1
单位
$5.95
获得报价
RFQ
3,662
有现货
Infineon Technologies MOSFET N-CH 80V 89A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 42W (Tc) N-Channel - 80V 89A (Tc) 2.8 mOhm @ 89A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB025N08N3GATMA1
获得报价
RFQ
880
有现货
Infineon Technologies MOSFET N-CH 80V 120A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB025N08N3GATMA1
单位
$5.18
获得报价
RFQ
2,332
有现货
Infineon Technologies MOSFET N-CH 80V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPB025N08N3GATMA1
单位
$2.51
获得报价
RFQ
2,671
有现货
Infineon Technologies MOSFET N-CH 80V 120A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
IPP028N08N3GXKSA1
单位
$5.03
获得报价
RFQ
3,595
有现货
Infineon Technologies MOSFET N-CH 80V 100A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 300W (Tc) N-Channel - 80V 100A (Tc) 2.8 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 6V, 10V ±20V
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