- 系列 :
- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,536
有现货
|
Renesas Electronics America | MOSFET P-CH 60V 36A TO-263 | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 56W (Tc) | P-Channel | - | 60V | 36A (Tc) | 29.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 54nC @ 10V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,579
有现货
|
Renesas Electronics America | MOSFET P-CH 60V 36A TO-263 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 56W (Tc) | P-Channel | - | 60V | 36A (Tc) | 29.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 54nC @ 10V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
692
有现货
|
Renesas Electronics America | MOSFET P-CH 60V 36A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 1.8W (Ta), 56W (Tc) | P-Channel | - | 60V | 36A (Tc) | 29.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 54nC @ 10V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,351
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,644
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
966
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,083
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,072
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,016
有现货
|
Infineon Technologies | MOSFET N-CH 20V 15A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 15A (Ta) | 7 mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | 4.5V, 10V | ±20V | |||
|
获得报价 |
892
有现货
|
STMicroelectronics | MOSFET N-CH 60V 80A F7 TO220AB | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 158W (Tc) | N-Channel | - | 60V | 80A (Tc) | 3.5 mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 10V | 10V | ±20V |