- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,406
有现货
|
Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,002
有现货
|
Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
899
有现货
|
Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,266
有现货
|
Infineon Technologies | MOSFET P-CH 30V 21A PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.1W (Ta) | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,155
有现货
|
Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,042
有现货
|
Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,519
有现货
|
Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
989
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 50A PPAK 1212-8S | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 30V | 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,753
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 50A PPAK 1212-8S | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 30V | 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,325
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 50A PPAK 1212-8S | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 4.8W (Ta), 57W (Tc) | P-Channel | - | 30V | 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V |
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