- 系列 :
- 功耗（最大） :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- Vgs（最大值） :
13 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,337
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,618
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,974
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
3,815
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,212
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,536
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,148
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
813
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
3,487
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
3,857
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
|
获得报价 |
627
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | ||
|
|
|
获得报价 |
621
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | ||
|
|
|
获得报价 |
1,931
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - |
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