- 系列 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 驱动电压（最大Rds接通，最小Rds接通） :
18 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
1,672
有现货
|
Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TEMPFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | P-TO220AB | 40W (Tc) | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | ||
|
|
获得报价 |
3,352
有现货
|
Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TEMPFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220AB | 40W (Tc) | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | ||
|
|
|
获得报价 |
3,563
有现货
|
Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TEMPFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | P-TO220AB | 40W (Tc) | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | ||
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|
获得报价 |
2,730
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,077
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,351
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,326
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,807
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,918
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,494
有现货
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
906
有现货
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
812
有现货
|
Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 2.6W (Ta), 20W (Tc) | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
653
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,631
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
3,830
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,514
有现货
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
718
有现货
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,225
有现货
|
Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V |
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