- 零件状态 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
9 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
2,167
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,370
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,741
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
645
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,494
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,793
有现货
|
Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
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|
|
获得报价 |
963
有现货
|
Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,682
有现货
|
Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,400
有现货
|
Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 34A (Ta), 192A (Tc) | 1.5 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V |
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