- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
17 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,828
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,106
有现货
|
Infineon Technologies | MOSFET N-CH 40V 31A DIRECTFET | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L6 | DIRECTFET L6 | 3.3W (Ta), 83W (Tc) | N-Channel | - | 40V | 31A (Ta), 156A (Tc) | 1.9 mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | 5469pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,000
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 105W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.9 mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | 5V, 10V | ±16V | |||
|
获得报价 |
2,912
有现货
|
Infineon Technologies | MOSFET N-CH 40V 120A TO220-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,458
有现货
|
STMicroelectronics | MOSFET N-CH 650V 48A ISOTOP | MDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP® | 450W (Tc) | N-Channel | - | 650V | 48A (Tc) | 110 mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,192
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 105W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.9 mOhm @ 43A, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | 5V, 10V | ±16V | |||
|
获得报价 |
3,114
有现货
|
Infineon Technologies | MOSFET N-CH 40V 315A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L6 | DIRECTFET L6 | 3.3W (Ta), 83W (Tc) | N-Channel | - | 40V | 31A (Ta), 156A (Tc) | 1.9 mOhm @ 94A, 10V | 4V @ 150µA | 134nC @ 10V | 5469pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,146
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 40A TO263 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 150W (Tc) | P-Channel | - | 100V | 40A (Tc) | 40 mOhm @ 17A, 10V | 2.5V @ 250µA | 134nC @ 10V | 5295pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,266
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
2,771
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
1,887
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
2,614
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
637
有现货
|
Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
743
有现货
|
Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,297
有现货
|
Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,226
有现货
|
Infineon Technologies | MOSFET N-CH 40V 120A TO262-3-1 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 158W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.1 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,520
有现货
|
STMicroelectronics | MOSFET N-CH 650V 45A TO-247 | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 417W (Tc) | N-Channel | - | 650V | 45A (Tc) | 110 mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | 10V | ±30V |