- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
11 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,031
有现货
|
Infineon Technologies | MOSFET N-CH 120V 120A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 3.8 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,939
有现货
|
Infineon Technologies | MOSFET N-CH 120V 120A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 3.8 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
2,373
有现货
|
Infineon Technologies | MOSFET N-CH 120V 120A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 3.8 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,356
有现货
|
Infineon Technologies | MOSFET N-CH 120V 180A TO263-7 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 300W (Tc) | N-Channel | - | 120V | 180A (Tc) | 3.6 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,535
有现货
|
Infineon Technologies | MOSFET N-CH 120V 180A TO263-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 300W (Tc) | N-Channel | - | 120V | 180A (Tc) | 3.6 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,906
有现货
|
Infineon Technologies | MOSFET N-CH 120V 180A TO263-7 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 300W (Tc) | N-Channel | - | 120V | 180A (Tc) | 3.6 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,304
有现货
|
Infineon Technologies | MOSFET N-CH 120V 120A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
3,122
有现货
|
Infineon Technologies | MOSFET N-CH 120V 120A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 300W (Tc) | N-Channel | - | 120V | 120A (Tc) | 4.1 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | 13800pF @ 60V | 10V | ±20V | |||
|
获得报价 |
1,901
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | 16000pF @ 50V | 6V, 10V | ±20V | |||
|
获得报价 |
2,858
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | 16000pF @ 50V | 6V, 10V | ±20V | |||
|
获得报价 |
2,710
有现货
|
Infineon Technologies | MOSFET N-CH 100V 300A 8HSOF | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-1 | 375W (Tc) | N-Channel | - | 100V | 300A (Tc) | 1.5 mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | 16000pF @ 50V | 6V, 10V | ±20V |